论文标题
像素传感器电容的精确测量
Precision Measurement of Pixel Sensor Capacitance
论文作者
论文摘要
传感器系统电荷收集节点的电容是模拟前端电子设备设计的重要参数。高粒度传感器的模拟前端（例如混合像素探测器）需要优化用于定时分辨率，功耗和电子噪声 - 所有依赖于像素电容的参数。 HL-LHC升级的当前像素检测器的开发通常使用像素大小为$ 50 \ times 50 UM^2 $的硅传感器，这些硅尺寸为50 \ times times 50 um^2 $，其像素电容是几十ff的像素电容，取决于传感器几何形状。我们已经开发了一个专用的集成电路，以凸起像素传感器，该电路可以通过使用基于电荷的电容测量方法进行精确的像素电容测量。在本文中，我们将描述电容测量芯片（PixCAP65）的测量方法和实现，并显示平面像素传感器的测量结果，其像素电容受植入几何形状的变化影响。
The capacitance of the charge collection node of a sensor system is an important parameter for the design of the analog front-end electronics. The analog front-end of high-granularity sensors like for example hybrid pixel detectors need to be optimized for timing resolution, power consumption, and electronics noise - parameters which all depend on the pixel capacitance. Current pixel detector developments for the HL-LHC upgrade typically use silicon sensors with a pixel size in the order of $50 \times 50 um^2$ which have a pixel capacitance of several tens of fF, depending on the sensor geometry. We have developed a dedicated integrated circuit to be bump-bonded to a pixel sensor, which enables a precise pixel capacitance measurement by using charge-based capacitance measurement method. In this paper, we will describe the measurement method and the implementation of the capacitance measurement chip (Pixcap65) and show measurement results of a planar pixel sensor whose pixel capacitance is influenced by variations of the implant geometry.
