论文标题
单晶β-GA2O3的各向异性准静态介电常数
The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3
论文作者
论文摘要
通过Terahertz光谱测定了电绝缘氧化壳（β-GA2O3）的准静态各向异性介电常数。光谱范围从200 GHz到1 THz的偏振分辨频域光谱在沿不同方向上进行的散装晶体进行。沿晶体学轴C和B和相互晶格方向a*确定介电常数的主方向。在测得的光谱范围内，未观察到介电介电常数的实际部分中没有显着的频率分散。我们的结果与最近的射频电容测量值以及最新的红外测量声子模式和高频贡献的外推，并缩小Terahertz光谱范围内这些参数的知识差距。我们的结果对于在高频电子设备中的β-GA2O3应用很重要
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices
