论文标题

由自旋相关驱动的连续金属绝缘体过渡

A continuous metal-insulator transition driven by spin correlations

论文作者

Feng, Yejun, Wang, Yishu, Silevitch, D. M., Cooper, S. E., Mandrus, D., Lee, Patrick A., Rosenbaum, T. F.

论文摘要

金属 - 绝缘体的转变涉及电荷,自旋和结构性自由度的混合,并且在强烈相关时,可以削弱外来量子状态的出现。通过库仑差距的开放引起的莫特绝缘子是一个重要且公认的过渡类别,但是纯粹由自旋相关驱动的绝缘体却不太普遍,因为降低的能量量表通常会引起其他自由度的竞争。在这里,我们演示了一个干净的示例,即在全面的pyrochlore抗fiferromagnet CD22OS2O7中进行自旋驱动的金属 - 绝缘体转变,其中晶格对称性由抗fiferromagnetism完全保存。在导电的抗对称线性磁磁性之后,通过实验仔细仔细去除铁磁结构域壁,批量的霍尔系数揭示了四个费米表面,两种电子类型和两个孔类型,依次离开费米水平,在néel温度下方降低FERMI水平,T_N。与CD2OS2O7中的同时磁和金属绝缘体过渡的共同信念相反,连续金属绝缘体过渡的电荷间隙仅在T〜10K开放,远低于T_N = 227K。霍尔系数解决的绝缘机制与Slater图片相似,但没有折叠的布里鲁因区域,并与Mott绝缘体和旋转密度波的行为形成鲜明对比,在T_N上方和T_N上分别将电子间隙打开。

Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an important and well-recognized class of transitions, but insulators purely driven by spin correlations are much less common, as the reduced energy scale often invites competition from other degrees of freedom. Here we demonstrate a clean example of a spin-correlation-driven metal-insulator transition in the all-in-all-out pyrochlore antiferromagnet Cd2Os2O7, where the lattice symmetry is fully preserved by the antiferromagnetism. After the antisymmetric linear magnetoresistance from conductive, ferromagnetic domain walls is carefully removed experimentally, the Hall coefficient of the bulk reveals four Fermi surfaces, two of electron type and two of hole type, sequentially departing the Fermi level with decreasing temperature below the Néel temperature, T_N. Contrary to the common belief of concurrent magnetic and metal-insulator transitions in Cd2Os2O7, the charge gap of a continuous metal-insulator transition opens only at T~10K, well below T_N=227K. The insulating mechanism resolved by the Hall coefficient parallels the Slater picture, but without a folded Brillouin zone, and contrasts sharply with the behavior of Mott insulators and spin density waves, where the electronic gap opens above and at T_N, respectively.

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