论文标题
石墨烯的原位功能
In situ functionalization of graphene
论文作者
论文摘要
尽管石墨烯的基础平面是惰性的，但它的缺陷是化学活性的中心。这种缺陷的有吸引力的应用是用外国分子控制石墨烯的功能化。但是，缺陷与反应性环境（例如环境）的相互作用降低了功能化的效率，并使其无法控制。在这里，我们报告了一种新颖的方法来生成，通过时间分辨率进行监控，并使缺陷$ \ textIt {intu} $功能化，而无需将它们暴露于环境。这些缺陷是由能量氩等离子体生成的，并且使用$ \ textit {intu} $ raman光谱法监测其性质。我们发现这些缺陷是功能性的，非常反应性，并且将其密度从$ \ cdot10^{13} cm^{ - 2} $转换为$ \ cdot10^{11} cm^{ - 2} $。我们通过使用Argon等离子体生成缺陷并使用Ammonia Functional functional functional functional functional functional $ \ textIt {int situ} $ functionalizational功能化。该功能化诱导N掺杂的载体密度高达$ 5 \ cdot10^{12} cm^{ - 2} $在石墨烯中，并且在环境条件下保持稳定。
While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel approach to generate, monitor with time resolution, and functionalize the defects $\textit{in situ}$ without ever exposing them to the ambient. The defects are generated by an energetic Argon plasma and their properties are monitored using $\textit{in situ}$ Raman spectroscopy. We find that these defects are functional, very reactive, and strongly change their density from $\approx 1\cdot10^{13} cm^{-2}$ to $\approx 5\cdot10^{11} cm^{-2}$ upon exposure to air. We perform the proof of principle $\textit{in situ}$ functionalization by generating defects using the Argon plasma and functionalizing them $\textit{in situ}$ using Ammonia functional. The functionalization induces the n-doping with a carrier density up to $5\cdot10^{12} cm^{-2}$ in graphene and remains stable in ambient conditions.
