论文标题
第一原理中半导体中温暖电子的电子噪声
Electronic noise of warm electrons in semiconductors from first-principles
论文作者
论文摘要
低场电子运输特性（例如半导体中的载流子迁移率）的Ab-Initio理论已建立了良好的建立。然而，对非平衡稳态的电子波动的等效处理（易于通过实验探测）仍然不太探索。在这里，我们报告了半导体中温暖电子电子噪声的第一原理理论。与用于电子噪声的典型数值方法相反，本文中不需要可调节的参数，电子带结构和散射速率是根据第一原理计算得出的。我们通过将其应用于GAAS来证明我们的方法的实用性，并表明AC传输性能和噪声中的光谱特征来自动量和能量弛豫的不同时间尺度，尽管光子声子散射的主导地位。我们的形式主义实现了一种无参数的方法来探测微观传输过程，从而导致半导体中的电子噪声。
The ab-initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a non-equilibrium steady state, which are readily probed experimentally, remains less explored. Here, we report a first-principles theory of electronic noise for warm electrons in semiconductors. In contrast with typical numerical methods used for electronic noise, no adjustable parameters are required in the present formalism, with the electronic band structure and scattering rates calculated from first-principles. We demonstrate the utility of our approach by applying it to GaAs and show that spectral features in AC transport properties and noise originate from the disparate time scales of momentum and energy relaxation, despite the dominance of optical phonon scattering. Our formalism enables a parameter-free approach to probe the microscopic transport processes that give rise to electronic noise in semiconductors.
