论文标题
氮化液量子点：偏振纠缠光子发射的随机合金波动的结果
Indium gallium nitride quantum dots: Consequence of random alloy fluctuations for polarization entangled photon emission
论文作者
论文摘要
我们通过原子多体框架分析了$ c $ plane ingan/gan量子点对极化纠缠的光子发射的潜力。特别注意随机合金波动对激子精细结构和激子结合能的影响。我们的计算表明，只要保留了基础$ c_ {3v} $ - 对称性，$ c $ plane ingan/gan量子点是高温纠缠光子发射的理想候选。但是，当假设DOT中的随机合金波动时，我们的原子计算表明，虽然较大的激子结合能仅略有影响，但$ C_ {3V} $对称性基本上由于合金波动而丢失。我们发现，对称性中的这种损失显着影响激子的精细结构。观察到的精细结构的变化和随附的光极化特性对通过Biexciton-Exciton Cascade对极化纠缠的光子发射具有有害作用。在这里，我们还讨论了可能受益于大型激子结合能的可能替代方案，以实现在升高温度下从$ c $ plane ingan/gan量子点发射的非经典光发射。
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic fine structure and the excitonic binding energy. Our calculations show that $c$-plane InGaN/GaN quantum dots are ideal candidates for high temperature entangled photon emission as long as the underlying $C_{3v}$-symmetry is preserved. However, when assuming random alloy fluctuations in the dot, our atomistic calculations reveal that while the large excitonic binding energies are only slightly affected, the $C_{3v}$ symmetry is basically lost due to the alloy fluctuations. We find that this loss in symmetry significantly impacts the excitonic fine structure. The observed changes in fine structure and the accompanied light polarization characteristics have a detrimental effect for polarization entangled photon pair emission via the biexciton-exciton cascade. Here, we also discuss possible alternative schemes that benefit from the large excitonic binding energies, to enable non-classical light emission from $c$-plane InGaN/GaN quantum dots at elevated temperatures.
