论文标题
金属有机蒸气 - 表外观增长\ b {eta} - （alxga1-x）2O3/\ b {eta} -ga2O3异质结构通道的生长和表征
Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
论文作者
论文摘要
我们报告了金属有机蒸气相位的增长和表征，增长\ b {eta} - （alxga1-x）2O3/\ b {eta} -Ga2O3调制掺杂的异质结构。电子通道是通过利用掺杂的\ b {eta} - （alxga1-x）2O3屏障来实现在异质结构中的。使用传递长度方法，电容 - 电压和霍尔测量值研究电子通道特性。在室温下测量了1.06 x 1013 cm-2的霍尔板电荷密度，迁移率为111 cm2/vs。制造的晶体管显示峰值电流为22 mA/mm，启用比为8 x 106。在室温下测量了5.3kΩ/正方形的板电阻，其中包括\ b {eta} - （alxga1-x）2O3中平行通道的贡献。
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.
