论文标题
与极端紫外线收集有关的表面上的锡滴污染的低温清洁
Cryogenic cleaning of tin-drop contamination on surfaces relevant for extreme ultraviolet light collection
论文作者
论文摘要
工具可靠性和正常运行时间的提高是目前在极端紫外线光刻发展的重点。在基于锡的血浆光源中,极端紫外线的收集镜的寿命受到污染的厚度较厚的锡沉积物的限制,而厚锡沉积物无法通过血浆蚀刻来足够快地去除。对于粘在大底物上的锡液滴夹,我们已经开发并比较了基于低温冷却的几种有效的清洁技术。测试了一个直径高达6英寸的碳化硅底物和不同的硅晶片样品,表面未涂层,多层涂层,非结构化和光栅结构化。锡滴入加热样品中后,在使用灰色锡种子晶体启动锡生虫之后,通过相变的应力诱导液滴污染的含量。在所有测试的表面上,在不到24小时内,通过冷却冷氮气蒸气到-30至-50°C的温度,在不到24小时的情况下,在不到24小时的情况下,在不到24小时的时间内将最初的粘合剂沉积物转换为松散的灰色锡。另外,通过β-SN液滴夹层分层的压力引起的锡驱动,通过收缩应变,通过强烈冷却到约-120°C的温度诱导的收缩应变。细节测量法已用于分析从光栅结构晶片中去除的锡液滴夹板的底部。原位锡清洁技术可提供与样品浸入液氮中或通过使用手持喷气机式喷嘴后的二氧化碳气溶胶撞击后通过样品浸入液体氮或SPLAT去除来实现的结果。讨论了在商业光源中清洁收集镜的原位相关概念的实施。
Improvement of tool reliability and uptime is a current focus in development of extreme ultraviolet lithography. The lifetime of collection mirrors for extreme ultraviolet light in tin-based plasma light sources is limited considerably by contamination with thick tin deposits that cannot be removed sufficiently fast by plasma etching. For tin droplet splats sticking to large substrates, we have developed and compared several efficient cleaning techniques based on cryogenic cooling. A silicon carbide substrate and different silicon wafer samples with up to 6 inch diameter with the surface uncoated, multilayer-coated, unstructured and grating-structured were tested. After tin dripping onto heated samples, embrittlement of droplet contamination is induced in-situ by stresses during phase transformation, following the initiation of tin pest with seed crystals of gray tin. Conversion of initially adhesive deposits to loose gray tin has been reached in less than 24 hours on all tested surfaces by continuous cooling with cold nitrogen vapor to temperatures in the range of -30 to -50 °C. Alternatively, stress-initiated tin-removal by delamination of beta-Sn droplet splats has been attained via contraction strain induced by strong cooling to temperatures of around -120 °C. Profilometry has been used to analyze the bottom side of tin droplet splats removed from a grating-structured wafer. The in-situ tin cleaning techniques give results comparable to fast ex-situ cleaning that has been achieved either by sample immersion in liquid nitrogen or by splat removal after CO2 snowflake aerosol impact using a hand-held jet-nozzle. The implementation of the in-situ phase-conversion concept for the cleaning of collector mirrors in commercial light sources for lithography is discussed.