论文标题

“ Inside Out”生长法的高质量氮掺杂石墨烯

"Inside Out" Growth Method for High-Quality Nitrogen-Doped Graphene

论文作者

Fiori, Sara, Perilli, Daniele, Panighel, Mirco, Cepek, Cinzia, Ugolotti, Aldo, Sala, Alessandro, Liu, Hongsheng, Comelli, Giovanni, Di Valentin, Cristiana, Africh, Cristina

论文摘要

通过利用镍的催化特性和氮原子在其大块中的溶解度来制备高质量的氮掺杂石墨烯。遵循标准的化学蒸气沉积程序,将先前掺杂的镍底物暴露于含碳的前体中,以使氮原子隔离到表面,仍然被困在不断增长的石墨烯网络中。通过扫描隧道显微镜和X射线光电子光谱法表明该过程产生平坦,宽,连续的氮掺杂石墨烯层,形态学和化学表征表明该过程产生了该过程。实验结果与可能的结构模型的彻底密度功能理论研究结合在一起,以在石墨烯网格中观察到的氮原子的各种构型的原子尺度上获得清晰的描述。这种生长方法具有潜在的可扩展性,适用于具有明确定义的氮中心的高性能纳米磁发evies,可以在多个应用领域(例如电化学,储能,存储/储能/感应或废水处理或废水处理)中用作无金属的碳催化剂。

High-quality nitrogen-doped graphene on nickel is prepared by exploiting both the catalytic properties of nickel and the solubility of nitrogen atoms into its bulk. Following the standard chemical vapor deposition procedure, a previously nitrogen-doped nickel substrate is exposed to carbon-containing precursors so that nitrogen atoms, segregating to the surface, remain trapped in the growing graphene network. Morphological and chemical characterization by scanning tunneling microscopy and X-ray photoelectron spectroscopy demonstrates that the process yields a flat, wide, continuous nitrogen-doped graphene layer. Experimental results are combined with a thorough density functional theory investigation of possible structural models, to obtain a clear description at the atomic scale of the various configurations of the nitrogen atoms observed in the graphene mesh. This growth method is potentially scalable and suitable for the production of high-performance nano-devices with well-defined nitrogen centers, to be exploited as metal-free carbon-based catalysts in several applicative fields such as electrochemistry, energy storage, gas storage/sensing or wastewater treatment.

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