论文标题

无限空间维度中的Chern绝缘子相互作用

Interacting Chern Insulator in Infinite Spatial Dimensions

论文作者

Krüger, David, Potthoff, Michael

论文摘要

我们研究了Chern绝缘子的通用模型,该模型由任意尺寸$ d $中的Hubbard交互作用补充,并证明该模型在$ d \ to \ infty $限制中仍然定义明确且不繁琐。动态平均场理论是适用的,并预测具有拓扑不同阶段连续的相图,将相关的Mott绝缘子与琐碎带绝缘子分开。我们讨论各种特征,例如绝缘状态和半金属状态之间的难以区分,在非相互作用的情况下它们已经是非常规的。拓扑阶段的特征是非量化的Chern密度,将Chern号码代替为$ d \ to \ infty $。

We study a generic model of a Chern insulator supplemented by a Hubbard interaction in arbitrary even dimension $D$ and demonstrate that the model remains well-defined and nontrivial in the $D \to \infty$ limit. Dynamical mean-field theory is applicable and predicts a phase diagram with a continuum of topologically different phases separating a correlated Mott insulator from the trivial band insulator. We discuss various features, such as the elusive distinction between insulating and semi-metal states, which are unconventional already in the non-interacting case. Topological phases are characterized by a non-quantized Chern density replacing the Chern number as $D\to \infty$.

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