论文标题
通过设计实验的设计对石墨烯现场效应晶体管的敏感性分析
Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
论文作者
论文摘要
石墨烯由于其独特的电子结构有利于高载体迁移率，被认为是在后硅电子时代中用于高速电子设备的有前途的材料。因此，过去几年对基于石墨烯的现场效应晶体管（GFET）（GFET）的实验研究迅速增加。但是，尽管在优化此类设备方面取得了持续的进展，但仍有许多关键问题要解决，例如它们的可重复性和性能统一性，以抗造由制造过程或操作条件引起的可能变化。在目前的工作中，在活性通道中（即其长度和宽度）以及在最高氧化物厚度中的耐受性引起的石墨烯场现场效应晶体管的ID-VDS特性的变化进行了数值研究，以评估此类设备的可靠性。采用了实验设计（DOE），目的是确定设备电性能的最具影响力因素，以便可以对制造过程进行适当优化。
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on graphene-based field-effect transistors (GFETs) has rapidly increased in the last years. However, despite the continuous progress in the optimization of such devices many critical issues remain to be solved such as their reproducibility and performance uniformity against possible variations originated by the manufacturing processes or the operating conditions. In the present work, changes of the ID-VDS characteristics of a Graphene Field-Effect Transistors, caused by a tolerance of 10% in the active channel (i.e. its length and width) and in the top oxide thickness are numerically investigated in order to assess the reliability of such devices. Design of Experiments (DoE) is adopted with the aim to identify the most influential factors on the electrical performance of the device, so that the fabrication process may be suitably optimized.
