带有芯片电荷泵的4通道10-Gbps/CH CMOS VCSEL阵列驱动器

论文标题

带有芯片电荷泵的4通道10-Gbps/CH CMOS VCSEL阵列驱动器

A 4-Channel 10-Gbps/ch CMOS VCSEL Array Driver with on-chip Charge-pumps

论文作者

Huang, X., Gong, D., Sun, Q., Chen, C., Guo, D., Hou, S., Huang, G., Kulis, S., Liu, C., Liu, T., Moreira, P., Rodríguez, A. Sánchez, Sun, H., Troska, J., Xiao, L., Zhang, L., Zhang, W., Ye, J.

论文摘要

我们介绍了4通道10-GBPS/CH垂直腔表面发射激光阵列驱动器CPVLAD的设计和测试结果。带有片上的电荷泵，以扩大低温操作和缓解辐射效应所需的VCSEL的偏置空间。 CPVLAD是在65 nm CMOS技术中制造的。测试结果表明，CPVLAD能够从2.5 V电源中驱动具有向前偏置电压高达2.8 V的VCSEL。 CPVLAD的功耗为94 MW/CH。

We present the design and test results of a 4-channel 10-Gbps/ch Vertical-Cavity Surface-Emitting Laser array driver, the cpVLAD. With on-chip charge-pumps to extend the biasing headroom for the VCSELs needed for low temperature operation and mitigation of the radiation effects. The cpVLAD was fabricated in a 65-nm CMOS technology. The test results show that the cpVLAD is capable of driving VCSELs with forward bias voltages as high as 2.8 V from a 2.5 V power supply. The power consumption of the cpVLAD is 94 mW/ch.

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