论文标题
外延石墨烯/GE接口：MinireView
Epitaxial graphene/Ge interfaces: a minireview
论文作者
论文摘要
最近发现，在半导体GE表面上执行石墨烯层直接外延生长的能力导致了该主题的极大兴趣。引起这种兴趣的原因之一是有机会克服现代半导体技术中石墨烯集成方式的几个缺点。另一个与新的石墨烯 - 轴导剂界面的基本研究有关，这可能有助于更深入地理解机制，该机制控制了不同底物上的石墨烯的生长，以及对石墨烯与这些底物的相互作用的相互作用的启示，这些底物现在从金属传播到绝缘剂。目前的MinireView及时概述了石墨烯 - GE外延界面研究领域的最先进，并在该研究领域绘制了一些透视方向。
The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semiconductor Ge surfaces led to the huge interest to this topic. One of the reasons for this interest is the chance to overcome several present-day drawbacks on the way of the graphene integration in the modern semiconductor technology. The other one is connected with the fundamental studies of the new graphene-semiconductor interfaces, that might help with the deeper understanding of mechanisms, which governs graphene growth on different substrates as well as shed light on the interaction of graphene with these substrates, which range is now spread from metals to insulators. The present minireview gives a timely overview of the state-of-the-art in the field of studies of the graphene-Ge epitaxial interfaces and draw some perspective directions in this research area.
