论文标题
基于串联水平隧道连接的级联电子源
A Cascade Electron Source Based on Series Horizontal Tunneling Junctions
论文作者
论文摘要
片上电子源在微型真空设备中具有广泛的潜在应用，并且发射效率是其性能基准之一。提出了基于串联的金属绝不能构造器水平隧道连接的级联电子源，其中从每个隧道连接中提取了自由电子。具有N水平隧道连接的级联电子源显示出大约η（n）= 1-（1-η_0）^n的理论发射效率，η_0是单个隧道交界处的效率。在实验上，证明了具有三个Si-Siox-Si隧道连接的级联电子源，达到了高达47.6％的发射效率。这项工作为实现高效的片上电子源提供了一种新的方式。
On-chip electron sources have wide potential applications in miniature vacuum electronic devices and emission efficiency is one of their performance benchmarks. A cascade electron source based on series metal-insulator-metal horizontal tunneling junctions is proposed, where free electrons are additively extracted from each tunneling junction. A cascade electron source with n horizontal tunneling junctions shows a theoretical emission efficiency of approximately η(n)=1-(1-η_0 )^n, with η_0 being the efficiency of a single tunneling junction. Experimentally, a cascade electron source with three Si-SiOx-Si tunneling junctions is demonstrated, achieving an emission efficiency as high as 47.6%. This work provides a new way of realizing highly efficient on-chip electron sources.
