论文标题

基于串联水平隧道连接的级联电子源

A Cascade Electron Source Based on Series Horizontal Tunneling Junctions

论文作者

Li, Zhiwei, Wei, Xianlong

论文摘要

片上电子源在微型真空设备中具有广泛的潜在应用,并且发射效率是其性能基准之一。提出了基于串联的金属绝不能构造器水平隧道连接的级联电子源,其中从每个隧道连接中提取了自由电子。具有N水平隧道连接的级联电子源显示出大约η(n)= 1-(1-η_0)^n的理论发射效率,η_0是单个隧道交界处的效率。在实验上,证明了具有三个Si-Siox-Si隧道连接的级联电子源,达到了高达47.6%的发射效率。这项工作为实现高效的片上电子源提供了一种新的方式。

On-chip electron sources have wide potential applications in miniature vacuum electronic devices and emission efficiency is one of their performance benchmarks. A cascade electron source based on series metal-insulator-metal horizontal tunneling junctions is proposed, where free electrons are additively extracted from each tunneling junction. A cascade electron source with n horizontal tunneling junctions shows a theoretical emission efficiency of approximately η(n)=1-(1-η_0 )^n, with η_0 being the efficiency of a single tunneling junction. Experimentally, a cascade electron source with three Si-SiOx-Si tunneling junctions is demonstrated, achieving an emission efficiency as high as 47.6%. This work provides a new way of realizing highly efficient on-chip electron sources.

扫码加入交流群

加入微信交流群

微信交流群二维码

扫码加入学术交流群,获取更多资源