论文标题
在低温温度下使用非常低的电阻Al/Cu关节
Very low resistance Al/Cu joints for use at cryogenic temperatures
论文作者
论文摘要
我们提出了两种不同的技术，可在低温温度下铜和铝之间达到低阻力（$ <$ 20 n $ \rmΩ$）。最好的方法是基于在同一设备中AR等离子体蚀刻后的电子束蒸发器中表面的金镀层，产生了随着时间稳定的低至3 n $ \ rm的电阻。第二种方法涉及在Al/Cu关节中插入粘液。对于这两种方法，我们认为关键要素是表面抛光，氧化铝表面层的总去除以及临时应用大型（典型的11 kN）压缩力。我们认为，镀金触点的值是有史以来报告的最低cu/al int toct of $ \ rm cm^{2} $的值。这项技术可以简化用于晚期低温药物应用的热链接的构建，特别是核消极冰箱的极低电阻热开关。
We present two different techniques for achieving low resistance ($<$20 n$\rm Ω$) contacts between copper and aluminium at cryogenic temperatures. The best method is based on gold plating of the surfaces in an e-beam evaporator immediately after Ar plasma etching in the same apparatus, yielding resistances as low as 3 n$\rm Ω$ that are stable over time. The second approach involves inserting indium in the Al/Cu joint. For both methods, we believe key elements are surface polishing, total removal of the aluminum oxide surface layer, and temporary application of large (typ. 11 kN) compression forces. We believe the values for gold plated contacts are the lowest ever reported for a Cu/Al joint of a few $\rm cm^{2}$. This technology could simplify the construction of thermal links for advanced cryogenics applications, in particular that of extremely low resistance heat switches for nuclear demagnetization refrigerators.
