论文标题
具有内在铁电的实验观察的扭曲硫化锗纳米线的光电表征
Optoelectronic characterisation of twisted germanium sulfide nanowires with experimental observation of intrinsic ferroelectricity
论文作者
论文摘要
我们报告了Eshelby扭曲的硫化锗（GES）纳米线的光电表征，并在GES的室温下首次实验性观察铁电序，这是一个原本的中心对称分子。这些纳米线的化学组成和结构通过各种光谱，微观和衍射技术证实。此外，随着时间的流逝，纳米线被发现稳定。从光电测量值中，我们发现这些P型半导体GES纳米线的电荷载体迁移率比GES纳米片更高，并且具有可持续的，可持续的，可持续的照相交换属性。室温铁电性的存在是通过压电响应力显微镜证实的，这表现出滞后和蝴蝶环，这是铁电材料的特征。我们的观察结果表明，可以利用扭曲的GES纳米线的特性，以制造有效的电感传感器，光电探测器，数据记忆和柔性电子设备。
We report the optoelectrical characterisation of Eshelby twisted Germanium sulfide (GeS) nanowires with first experimental observation of ferroelectric order at room temperature in GeS which is an otherwise centrosymmetric molecule. The chemical composition and structure of these nanowires were confirmed by various spectroscopic, microscopic and diffractive techniques. In addition, the nanowires were found to be stable over time. From the optoelectronic measurements we found that these p-type semiconducting GeS nanowires have up to two orders higher charge carrier mobility than GeS nanosheets and have sustainable, robust photo-switching property. The existence of room temperature ferroelectricity is confirmed by piezoresponse force microscopy which showed hysteresis and butterfly loop, characteristics of a ferroelectric material. Our observations reveal that the properties of twisted GeS nanowires can be harnessed in making efficient electric sensors, photodetectors, data memories and flexible electronics.
