论文标题
基于Van der waals异质结构的超快非易失性闪存
Ultrafast non-volatile flash memory based on van der Waals heterostructures
论文作者
论文摘要
闪存已成为无处不在的固态存储器设备，它被广泛用于便携式数字设备，计算机和企业应用程序中。信息时代的开发对记忆速度和保留性能提出了更高的要求。在这里，我们演示了基于MOS2/H-BN/多层石墨烯（MLG）van der wa waals异质结构的超快非挥发存储器，该异质结构具有原子级平面界面并实现了超快写作/擦除/擦除速度（〜20 ns），超过了所报道的已报道的已有的已预先闪光闪存（〜100 ns）。超快闪存可以为高速非易失性内存的下一代奠定基础。
Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay the foundation for the next-generation of high-speed non-volatile memory.
