论文标题
薄锡膜的磁力固定性中的量子临界点和多个交叉点
Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films
论文作者
论文摘要
我们已经测量了非常接近疾病驱动的超导体绝缘体过渡的锡薄膜的$ r（t，b）$，但仍处于零场和低温下。在磁场中，我们发现磁场等温线的三个不同的交叉点发生在磁场上$ b_ {cx} $在三个不同的温度区域中。 $ r（t，b）$中的每个交叉点对应于$ r（t，b_ {cx}）$中的高原。我们系统地研究了这些交叉点在疾病引起的超导体/绝缘体过渡附近的演变，确定量子相变的最有前途的候选者，并为两个关键指数$ z $和$ν$提供估计。
We have measured $R(T,B)$ of a TiN thin-film very close to the disorder-driven superconductor-insulator transition but still superconducting at zero field and low temperatures. In a magnetic field we find three distinct crossing point of the magnetoresistance isotherms occur at magnetic fields $B_{cX}$ in three different temperature regions. Each crossing point in $R(T,B)$ corresponds to a plateau in $R(T,B_{cX})$. We systematically study the evolution of these crossing point near the disorder-induced superconductor/insulator transition, identify the most promising candidate for a quantum phase transition, and provide estimates for the two critical exponents $z$ and $ν$.
