论文标题
半球硅Nanolens对405 nm激光的50 nm聚焦
Sub-50 nm focusing of 405 nm laser by hemispherical silicon nanolens
论文作者
论文摘要
在这项工作中，我们研究了从理论上的亚微米分子纳米果的光聚焦行为。结果表明，在405 nm处的焦点点光的宽度和深度分别可以达到42 nm（大约λ/10）和20 nm（λ/20）。理论分析表明，这种以纳米为主的现象来自两个原因：Si的高折射率和镜头的亚微米大小，这大大降低了材料损失的影响。 Si Nanolens的聚焦能力与当前的EUV技术相当，但成本低，为超分辨率光刻和光学显微镜提供了另一种方法。
In this work, we study the light focusing behaviors of sub-micron Si hemispherical nanolens in theory. Results show that the width and depth of the focus spot light at 405 nm can reach 42 nm (approximately λ/10) and 20 nm (λ/20), respectively. Theoretical analysis indicates that this nano-focusing phenomenon comes from two reasons, the high refractive index of Si and the sub-micro size of the lens which considerably decrease the influence of material losses. The focusing capability of Si nanolens is comparable with current EUV technique but with a low cost, providing an alternative approach towards super-resolution photolithography and optical microscopy.
