论文标题
2D异质结构中拓扑状态的非挥发性铁电控制
Nonvolatile ferroelectric control of topological states in 2D heterostructures
论文作者
论文摘要
量子自旋大厅（QSH）绝缘体材料具有拓扑保护的边缘状态，可以大大减少耗散，对下一代电子产品有用。但是，对拓扑边缘状态的非易失性控制仍然是一个挑战。在本文中，基于第一原理的计算，可切换拓扑状态在范德华（VDW）异质结构中发现，由二维（2d）BI（111）BI（111）双层（BL）和α-In2Se3组成，通过逆转铁电电离α-In2Se3的电偏置。拓扑切换是由与α-In2Se3的两个相反极化状态相关的不同电荷转移导致的。这种新的拓扑切换机制具有完全电气和非易失性的独特优势。我们的发现提供了一种前所未有的方法，可以在2D材料中实现对拓扑状态的铁电控制，这将在拓扑纳米级电子中具有很大的应用。
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state is still a challenge. In this paper, based on first-principles calculations, the switchable topological states are found in the van der Waals (vdW) heterostructures consisting of two dimensional (2D) Bi(111) bilayer (BL) and α-In2Se3 by reversing the electric polarization of the ferroelectric α-In2Se3. The topological switching results from the different charge transfer associated with the two opposite polarization states of α-In2Se3. This new topological switching mechanism has the unique advantages of being fully electrical as well as nonvolatile. Our finding provides an unprecedented approach to realize ferroelectric control of topological states in 2D materials, which will have great potential for applications in topological nanoscale electronics.
