论文标题
单壁碳纳米管晶体管晶体管的介电性制造的频率依赖性
Frequency dependence of dielectrophoresis fabrication of single-walled carbon nanotube field-effect transistor
论文作者
论文摘要
在本文中，我们提出了一个新的理论模型，用于单壁碳纳米管（SWCNT）的介电体（DEP）过程。我们获得了不同的频率间隔，以对齐宽的能量差距半导体SWCNT，这与普遍的模型显示出很大的差异。为此，我们研究了两个特定模型，即球形模型和椭圆形模型来估计频率间隔。然后，我们执行DEP过程，并使用所获得的频率（球形和椭圆形模型）进行SWCNT对齐。我们的经验结果声明了理论预测，即朝着基于椭圆形模型的DEP过程实现碳纳米管现场效应晶体管（CNT-FET）的关键步骤。
In this paper, we present a new theoretical model for the dielectrophoresis (DEP) process of the single-walled carbon nanotubes (SWCNT). We obtain a different frequency interval for the alignment of wide energy gap semiconductor SWCNTs which shows a considerable difference with the prevalent model. For this, we study two specific models namely, the spherical model and the ellipsoid model to estimate the frequency interval. Then, we perform the DEP process and use the obtained frequencies (of spherical and ellipsoid models) for the alignment of the SWCNTs. Our empirical results declare the theoretical prediction, i.e., a crucial step toward the realization of carbon nanotube field-effect transistor (CNT-FET) with the DEP process based on the ellipsoid model.
