论文标题
安德森本地化对掺杂哈伯德模型的影响
Anderson localization effects on doped Hubbard model
论文作者
论文摘要
我们通过动态平均场理论与典型的培养基理论相结合，得出了掺杂的哈伯德模型的疾病与掺杂相图，该理论允许描述莫特（相关驱动）和安德森（无序驱动的）金属 - 金属 - 绝缘体过渡。我们观察到从金属到Anderson-Mott绝缘子的过渡，以提高所有相互作用的混乱强度。在弱相关性方面和相当小的掺杂中，安德森 - 摩托绝缘子显示出与半填充时发现的特性。特别是，此阶段的特征是存在空位点。但是，如果我们进一步增加了掺杂或相关性，则出现了不同类型的安德森 - 莫特阶段，即使疾病的强度急剧较弱。该阶段占据了强相关方案中相图的最大部分，其特征是没有空位点。
We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are alike to the ones found at half-filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation however, an Anderson-Mott phase of different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong correlation regime, and is characterized by the absence of the empty sites.
