论文标题
反式对称晶体中对重孔旋转Qubit的空腔控制
Cavity Control over Heavy-Hole Spin Qubits in Inversion-Symmetric Crystals
论文作者
论文摘要
限制在半导体量子点（QD）中的重孔（HHS）的伪单胞素代表了快速且坚固的量子的有前途的候选人。尽管已经证明了使用Fresselhaus自旋轨道相互作用（SOI）进行的经典电场进行孔自旋操作，但我们的工作探索了基于腔体的Qubit操纵和耦合方案，用于构成平面HH QD的倒置对称晶体。选择示例性的材料锗（GE），我们得出了有效的腔介导的基态旋转耦合，从而利用了立方Rashba Soi。此外，我们提出了一组最佳参数，该参数允许在MHz范围内进行RABI频率，从而进入了腔量子电动力学的强耦合方案。
The pseudospin of heavy-holes (HHs) confined in a semiconductor quantum dot (QD) represents a promising candidate for a fast and robust qubit. While hole spin manipulation by a classical electric field utilizing the Dresselhaus spin-orbit interaction (SOI) has been demonstrated, our work explores cavity-based qubit manipulation and coupling schemes for inversion-symmetric crystals forming a planar HH QD. Choosing the exemplary material Germanium (Ge), we derive an effective cavity-mediated ground state spin coupling that harnesses the cubic Rashba SOI. In addition, we propose an optimal set of parameters which allows for Rabi frequencies in the MHz range, thus entering the strong coupling regime of cavity quantum electrodynamics.
