论文标题
接近零场自旋依赖性重组电流和来自Si/sio $ _2 $接口的电磁共振
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface
论文作者
论文摘要
介电接口对于金属 - 氧化物 - 轴导导器（MOS）电子设备（例如Si/Sio $ _2 $ MOS田间效应晶体管（MOSFET））具有陷阱状态，这些状态可以通过缺乏这种测量的解释来通过电气检测的旋转共振技术来可视化，但是由于缺乏这种测量的解释，因此缺乏该现象的一般理论。本文介绍了两种电旋转谐振技术的理论，即电检测到的磁共振（EDMR），以及最近观察到的接近零磁场磁磁性（NZFMR），通过概括性读取Shockley读取Hall陷阱辅助的重组通过Stochastic Liouville方程式进行了概括。在此介质界面处的自旋混合通过超精细相互作用发生，我们显示的可以在机械上或半经典地进行量子处理，从而在整个界面上的电流中产生明显的差异。通过分析NZFMR和EDMR的偏见依赖性，我们发现在半经典方法中可以很好地理解Si/Sio $ _2 $ MOSFET中的重组。
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assisted recombination current calculations via stochastic Liouville equations. Spin mixing at this dielectric interface occurs via the hyperfine interaction, which we show can be treated either quantum mechanically or semiclassically, yielding distinctive differences in the current across the interface. By analyzing the bias dependence of NZFMR and EDMR, we find that the recombination in a Si/SiO$_2$ MOSFET is well understood within a semiclassical approach.
