论文标题
Si（111）上的gan纳米线的小角度X射线散射：截断杆，刻面粗糙度和Porod定律
Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod's law
论文作者
论文摘要
从SI（111）上生长的GAN纳米线的小角度X射线散射进行了实验研究，并通过蒙特卡洛模拟对其进行建模。结果表明，大波向量处的散射强度不遵循Porod定律$ i（q）\ propto q^{ - 4} $。强度取决于侧面相对于入射X射线梁的方向。当散射载体沿着刻面法线定向时，它是最大的，因为表面截短杆散射的回忆。在大波向量$ q $下，发现散射强度会因表面粗糙度而降低。均方根粗糙度为0.9〜nm，即每微米长的3--4个原子步长的高度已经导致强度降低。
Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensity at large wave vectors does not follow Porod's law $I(q)\propto q^{-4}$. The intensity depends on the orientation of the side facets with respect to the incident X-ray beam. It is maximum when the scattering vector is directed along a facet normal, as a reminiscence of the surface truncation rod scattering. At large wave vectors $q$, the scattering intensity is found to be decreased by surface roughness. A root mean square roughness of 0.9~nm, which is the height of just 3--4 atomic steps per micron long facet, already gives rise to a strong intensity reduction.
