论文标题
热发射或隧道？理想的schottky反向泄漏电流的通用过渡电场$β$ -ga $ _ {2} $ o $ $ _ {3} $
Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current in $β$-Ga$_{2}$O$_{3}$
论文作者
论文摘要
随着表面电场的增加，通过肖特基障碍物从热发射机制占主导地位到障碍物的反向泄漏电流，以支配障碍物为主。在这项研究中，我们使用数值反向泄漏模型评估了$β$ -GA $ _ {2} $ o $ $ _ {3} $中的这种过渡电场（$ e _ {\ rm t} $）。 $ e _ {\ rm t} $发现对掺杂浓度和障碍高度的依赖性非常弱，因此近乎全额的温度依赖性就足够了，并且通过ga $ _ {2} $ o $ $ _ $ _ {3} $中的简单经验表达来给出。借助现场板设计，我们以GA $ _ {2} $ o $ _ {3} $ SCHOTTKY屏障Diodes近乎理想的散装反向泄漏特性进行实验观察，与我们的数值模型非常匹配，并确认了过渡区域的存在。在过渡电场附近，应考虑热发射和屏障隧道。该研究为准确的设计和建模提供了重要的指导，以$β$ -GA $ _ {2} $ o $ $ _ {3} $ SCHOTTKY BARRIER DIODES中的理想反向泄漏特性进行建模。
The reverse leakage current through a Schottky barrier transitions from a thermionic-emission dominated regime to a barrier-tunneling dominated regime as the surface electric field increases. In this study, we evaluate such transition electric field ($E_{\rm T}$) in $β$-Ga$_{2}$O$_{3}$ using a numerical reverse leakage model. $E_{\rm T}$ is found to have very weak dependence on the doping concentration and barrier height, thus a near-universal temperature dependence suffices and is given by a simple empirical expression in Ga$_{2}$O$_{3}$. With the help of a field-plate design, we observed experimentally in Ga$_{2}$O$_{3}$ Schottky barrier diodes a near-ideal bulk reverse leakage characteristics, which matches well with our numerical model and confirms the presence of the transition region. Near the transition electric field, both thermionic emission and barrier tunneling should be considered. The study provides important guidance toward accurate design and modeling of ideal reverse leakage characteristics in $β$-Ga$_{2}$O$_{3}$ Schottky barrier diodes.
