论文标题
铁电HF0.5ZR0.5O2薄膜的疲劳和保留率
Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
论文作者
论文摘要
考虑到膜必须同时呈现的主要铁电特性，建立了外延HF0.5ZR0.5O2的生长窗口：高remanent极化，低疲劳和长期保留。膜和烙印场的缺陷取决于沉积温度和氧气压力，分别对疲劳和保留产生影响。疲劳随着底物温度和压力的增加而增加，如果使用低温，则保留率很短。当考虑所有主要的铁电特性（Remance，Remanence，耐力和保留率）时，铁电HF0.5ZR0.5O2的外延稳定窗口的生长窗口较窄，但是沉积温度和压力范围仍然足够宽。
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue and long retention. Defects in the film and imprint field depend on deposition temperature and oxygen pressure, with an impact on fatigue and retention, respectively. Fatigue increases with substrate temperature and pressure, and retention is short if low temperature is used. The growth window of epitaxial stabilization of ferroelectric Hf0.5Zr0.5O2 is narrower when all major ferroelectric properties (remanence, endurance and retention) are considered, but deposition temperature and pressure ranges are still sufficiently wide.
