论文标题
通过角度分辨光发射光谱和密度功能理论研究的BI（111）的带状结构的异常温度演变
Unusual temperature evolution of band structure of Bi(111) studied by angle-resolved photoemission spectroscopy and density functional theory
论文作者
论文摘要
我们已经进行了在SI（111）上生长的BI（111）薄膜的角度分辨光发射光谱，并用温度研究了带结构的演变。我们揭示了RASHBA分裂表面状态和量子孔状态的能量分散体的出乎意料的较大温度变化，如高度依赖动量的能量移位所示。实验和第一原理之间的频带色散比较表明，在温度升高时，最高BI BiLayer的层间间距会扩展。本研究提供了一种新的途径，用于通过带结构的温度依赖性研究晶格和电子状态之间的相互作用。
We have performed angle-resolved photoemission spectroscopy of Bi(111) thin films grown on Si(111), and investigated the evolution of band structure with temperature. We revealed an unexpectedly large temperature variation of the energy dispersion for the Rashba-split surface state and the quantum-well states, as seen in the highly momentum-dependent energy shift as large as 0.1 eV. A comparison of the band dispersion between experiment and first-principles band-structure calculations suggests that the interlayer spacing at the topmost Bi bilayer expands upon temperature increase. The present study provides a new pathway for investigating the interplay between lattice and electronic states through the temperature dependence of band structure.
