论文标题
在2D过渡金属二甲硅烷半导体杂音的1D金属状态
1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions
论文作者
论文摘要
近年来，二维（2D）过渡金属二北元（TMDC）的侧向异质界已成为现实。其公共H结构中的半导体TMDC层具有非零的平面电化极化，这是拓扑不变的。我们通过第一原理计算表明，即使在分子上一脚上连接不同的材料的情况下，具有不同极化的TMDC之间的侧向2D异质结会在交界处产生一维（1D）金属状态。金属性并不取决于结构细节，并且可以根据交界处的拓扑不变的变化来解释。然而，这些1D金属易受1D不稳定性（例如电荷和旋转密度波）的影响，这使得2D TMDC杂音可用于研究1D物理学的理想系统。
Two-dimensional (2D) lateral heterojunctions of transition metal dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting TMDC layers in their common H -structure have a nonzero in-plane electric polarization, which is a topological invariant. We show by means of first-principles calculations that lateral 2D heterojunctions between TMDCs with a different polarization generate one-dimensional (1D) metallic states at the junction, even in cases where the different materials are joined epitaxially. The metallicity does not depend upon structural details, and is explained from the change in topological invariant at the junction. Nevertheless, these 1D metals are susceptible to 1D instabilities, such as charge- and spin-density waves, making 2D TMDC heterojunctions ideal systems for studying 1D physics.
