论文标题
直接对电流诱导的抗铁磁开关进行直接成像，揭示了纯热磁弹性开关机构
Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism
论文作者
论文摘要
我们揭示了电流抗抗铁磁体/重金属系统的电流诱导的磁切换的起源。我们利用并发传输和磁光测量值来对Nio/PT BiLayers专门设计的设备中的抗铁磁域的切换进行想象。不同的电脉冲和装置几何形状揭示了相对于电流方向的切换的不同最终状态。我们可以通过模拟温度诱导的应变来解释这些，并确定热磁弹性开关机制与热激发结合作为原点，其中最终状态由应变分布定义，并且需要热量来切换抗铁磁域。我们表明，这种潜在的非常多功能的非接触机制可以解释先前报道的切换最终状态的矛盾观察结果，这归因于自旋轨道扭矩机制。
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile non-contact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.
