论文标题
量子点中的浅孔状态:数值计算和现象学模型
Light-hole states in a strained quantum dot: numerical calculation and phenomenological models
论文作者
论文摘要
从6频段\ textbf {k.p}的数值解决方案开始,描述了位于纳米线内部的晶格匹配的椭圆形量子点,包括旋转Zeeman效应,具有适合于稀磁性半导体的值,我们建议和测试现象学模型,该效果是对重点和exciton light和Exciton的内置效果的效果。我们测试了限于基态的($γ_8$)四倍的描述的有效性和限制,我们证明了轻孔状态与轻孔激发态相互作用的作用。 We show that the built-in axial strain not only defines the character, heavy-hole or light-hole, of the ground state, but also mixes significantly the light-hole state with the split-off band's states: Even for a spin-orbit energy as large as 1 eV, that mixing induces first-order modifications of properties such as the spin value and anisotropy, the oscillator strength, and the electron-hole exchange, for which we extend the description to the light-hole激子。 CDTE/ZNTE量子点主要用作测试案例,但是我们讨论的概念适用于许多异质结构,从不匹配的II-VI和IIII-V量子点和纳米线到IIII-V纳米结构,到提交给施加的应力的IIII-V纳米结构,以及具有较小剩余较小较小的硅纳米对硅的纳米设备。
Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and the limits of a description restricted to a ($Γ_8$) quadruplet of ground states and we demonstrate the role of the interactions of the light-hole state with light-hole excited states. We show that the built-in axial strain not only defines the character, heavy-hole or light-hole, of the ground state, but also mixes significantly the light-hole state with the split-off band's states: Even for a spin-orbit energy as large as 1 eV, that mixing induces first-order modifications of properties such as the spin value and anisotropy, the oscillator strength, and the electron-hole exchange, for which we extend the description to the light-hole exciton. CdTe/ZnTe quantum dots are mainly used as a test case but the concepts we discuss apply to many heterostructures, from mismatched II-VI and III-V quantum dots and nanowires, to III-V nanostructures submitted to an applied stress and to silicon nanodevices with even smaller residual strains.