论文标题
域壁介导的磁化磁化强度逆转的热稳定性，垂直于W具有W插入层的MRAM细胞
Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers
论文作者
论文摘要
我们提出了一个分析模型，用于计算磁场驱动的域壁介导的磁化磁化强度的磁化磁力逆转，并将其应用于研究热稳定性因子$δ$δ$Δ$Δ$ n层的各种厚度W层插入自由层（FL）的厚度（FL）的厚度（fl）的功能。我们发现，通过增加W厚度，FL膜的有效垂直磁各向异性（PMA）能量密度单调增加，但与此同时，该细胞的$δ$主要减少。我们的分析表明，除了饱和磁化$ m_s $和交换刚度常数$ a_ \ mathrm {exrm {ex} $外，量化单元的$δ$的参数是其强制性场$ h_c $，而不是包含该单元的FL膜的Net Net PMA Field $ H_K $。
We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory (MRAM) cell and apply it to study thermal stability factor $Δ$ for various thicknesses of W layers inserted into the free layer (FL) as a function of the cell size and temperature. We find that, by increasing W thickness, the effective perpendicular magnetic anisotropy (PMA) energy density of the FL film monotonically increases, but at the same time, $Δ$ of the cell mainly decreases. Our analysis shows that, in addition to saturation magnetization $M_s$ and exchange stiffness constant $A_\mathrm{ex}$ of the FL film, the parameter that quantifies the $Δ$ of the cell is its coercive field $H_c$, rather than the net PMA field $H_k$ of the FL film comprising the cell.
