论文标题
使用高K介电超口连结构结构的分析模型和设计超出单极的障碍物二极管二极管二极管
Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures
论文作者
论文摘要
这项工作介绍了使用High-K介电超连接的Beta-GA2O3 Schottky屏障二极管的设计，从而显着增强了击穿电压与现已高的单极绩效数字之外的抗抗性权衡。使用TCAD仿真和使用共形映射技术优化了设备参数。发现介电性超缝结构对设备尺寸和绝缘体的介电常数高度敏感。纵横比是长度与漂移区域宽度的比率，被发现是设计结构的最重要参数，而所提出的方法仅适用于远高于一个的纵横比。介电层的宽度和介电常数在改善设备性能方面也起着至关重要的作用，并经过优化以实现最大功绩。使用优化的结构，纵横比为10，介电常数为300，该结构被预测超过了B-GA2O3单极的功绩图四次，这表明这种结构对特殊FOM垂直电力电子的承诺有望。
This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device parameters are optimized using both TCAD simulations and analytical modeling using conformal mapping technique. The dielectric superjunction structure is found to be highly sensitive to the device dimensions and the dielectric constant of the insulator. The aspect ratio, which is the ratio of the length to the width of the drift region, is found to be the most important parameter in designing the structure and the proposed approach only works for aspect ratio much greater than one. The width of the dielectric layer and the dielectric constant also plays a crucial role in improving the device properties and are optimized to achieve maximum figure of merit. Using the optimized structure with an aspect ratio of 10 and a dielectric constant of 300, the structure is predicted to surpass the b-Ga2O3 unipolar figure of merit by four times indicating the promise of such structures for exceptional FOM vertical power electronics.
