论文标题
长期连续评估SRAM PUF和随机数来源
Long-term continuous assessment of SRAM PUF and source of random numbers
论文作者
论文摘要
由于硅老化，物理不荡情功能（PUF）的质量遭受了几种明显的降解。在本文中，我们研究了硅老化对静态随机访问记忆（SRAM）启动行为的PUF的长期影响。先前对SRAM衰老的研究基于晶体管级的模拟或在高温和电压下加速老化测试，以在短时间内观察老化效应。相比之下，我们已经在名义条件下对16个Arduino Leonardo董事会进行了长期连续加电测试。总的来说，我们收集了约1.75亿次测量，以进行可靠性，独特性和随机评估。分析表明，相对于参考的碎屑数量增加了19.3％，而SRAM PUF噪声的最小内向噪声平均提高了19.3％。在名义条件下，老化对可靠性的影响要比以前通过加速老化测试评估的影响要小。我们在这项工作中进行的测试更类似于该场中设备的条件，因此我们更准确地评估了硅老化如何影响SRAM PUF。
The qualities of Physical Unclonable Functions (PUFs) suffer from several noticeable degradations due to silicon aging. In this paper, we investigate the long-term effects of silicon aging on PUFs derived from the start-up behavior of Static Random Access Memories (SRAM). Previous research on SRAM aging is based on transistor-level simulation or accelerated aging test at high temperature and voltage to observe aging effects within a short period of time. In contrast, we have run a long-term continuous power-up test on 16 Arduino Leonardo boards under nominal conditions for two years. In total, we collected around 175 million measurements for reliability, uniqueness and randomness evaluations. Analysis shows that the number of bits that flip with respect to the reference increased by 19.3% while min-entropy of SRAM PUF noise improves by 19.3% on average after two years of aging. The impact of aging on reliability is smaller under nominal conditions than was previously assessed by the accelerated aging test. The test we conduct in this work more closely resembles the conditions of a device in the field, and therefore we more accurately evaluate how silicon aging affects SRAM PUFs.
