论文标题
在过渡金属二分法中氧化锆的热稳定性
Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides
论文作者
论文摘要
与过渡金属二核苷（TMDC）相连的铁电氧化物，由于在TMDC表面上缺乏悬挂键，导致高质量和突然的铁电/TMDC界面，这为基于铁电的设备提供了有希望的途径。在这项工作中，该界面的热稳定性是通过直接在地质MOS2和随附的WSE2上的首次沉积氧化物（HZO）探索的，然后在超高真空（UHV）中进行顺序退火，并在一系列温度（400-800°C）（400-800°C）（400-800°C）（400-800°C），并通过x-ray spececre（x-ray specife）检查（400-800°C）。我们表明，通过原子层沉积（ALD）生长的HZO的成核和稳定性取决于TMDC的功能化，并且沉积条件可能导致WSE2中的钨氧化。观察到沉积在非官能化MOS2上的HZO在退火时是不稳定的，并且在400-800°C范围内稳定了官能化的MOS2。 HZO/WSE2接口稳定，直到700°C，此后SE开始从WSE2演变。此外，还有证据表明，在高温下，Hzo膜被钝化的氧气空位。最后，使用X射线衍射（XRD）来确认所研究温度范围内HZO的结晶。
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 and as-grown WSe2, followed by sequential annealing in ultra-high vacuum (UHV) over a range of temperatures (400-800 °C), and examining the interface through X-ray photoelectron spectroscopy (XPS). We show that the nucleation and stability of HZO grown through atomic layer deposition (ALD) varied depending on functionalization of the TMDC, and the deposition conditions can cause tungsten oxidation in WSe2. It was observed that HZO deposited on non-functionalized MoS2 was unstable and volatile upon annealing, while HZO on functionalized MoS2 was stable in the 400-800 °C range. The HZO/WSe2 interface was stable until 700 °C, after which Se began to evolve from the WSe2. In addition, there is evidence of oxygen vacancies in the HZO film being passivated at high temperatures. Lastly, X-ray diffraction (XRD) was used to confirm crystallization of the HZO within the temperature range studied.
