论文标题
硅传感器中电场的电光成像
Electro-optical imaging of electric fields in silicon sensors
论文作者
论文摘要
提出了用于测量硅探测器中电气场的概念设置。它基于Franz-keldysh效应，该效应描述了光吸收的电场依赖性，其能量接近硅带隙。使用已发布的数据，估计了1至4 kV/cm的测量精度。该设置旨在确定辐射受损的硅检测器中的电场，这是辐射通量和颗粒类型，温度和偏置电压的函数。介绍了设置的整体概念和各个组件。
A conceptual set-up for measuring the electric field in silicon detectors by electro-optical imaging is proposed. It is based on the Franz-Keldysh effect which describes the electric field dependence of the absorption of light with an energy close to the silicon band gap. Using published data, a measurement accuracy of 1 to 4 kV/cm is estimated. The set-up is intended for determining the electric field in radiation-damaged silicon detectors as a function of irradiation fluence and particle type, temperature and bias voltage. The overall concept and the individual components of the set-up are presented.
