论文标题
在原子上薄的半导体中的集体MIE激子 - 果龙
Collective Mie Exciton-Polaritons in an Atomically Thin Semiconductor
论文作者
论文摘要
介电纳米antennas的光学诱导的MIE共振具有低耗散性损失和电气和磁场的大共振剂增强。他们为血浆共振提供了一个替代平台,以研究从弱耦合方案到强大耦合方案的光结合相互作用。在这里,我们通过实验证明了单层WS $ _2 $与MIE表面晶格共振(MIE-SLRS)中明亮的激子的强耦合。我们在角度分散测量中解决了SI纳米颗粒阵列的电气和磁MIE-SLR。在零引导条件下,电动MIE-SLR(E-SLR)的分散表现出清晰的抗横断和上层和下极化带之间32 MeV的狂犬病。磁性MIE-SLR(M-SLR)几乎越过激子的能带。这些结果表明,M-SLR的领域由平面外部组件主导,这些组件与单层WS $ _2 $的平面激素偶极子没有有效搭配。相比之下,具有相对较高质量因子(Q $ \ sim $ 120)的电介质纳米颗粒阵列中的E-SLR有助于集体Mie Ickiton-Polaritons的形成,并且可以允许开发新颖的极性设备,从而可以量身定制原子质上较薄的二维半指导器的光电特性。
Optically induced Mie resonances in dielectric nanoantennas feature low dissipative losses and large resonant enhancement of both electric and magnetic fields. They offer an alternative platform to plasmonic resonances to study light-matter interactions from the weak to the strong coupling regimes. Here, we experimentally demonstrate the strong coupling of bright excitons in monolayer WS$_2$ with Mie surface lattice resonances (Mie-SLRs). We resolve both electric and magnetic Mie-SLRs of a Si nanoparticle array in angular dispersion measurements. At the zero detuning condition, the dispersion of electric Mie-SLRs (e-SLRs) exhibits a clear anti-crossing and a Rabi-splitting of 32 meV between the upper and lower polariton bands. The magnetic Mie-SLRs (m-SLRs) nearly cross the energy band of excitons. These results suggest that the field of m-SLRs is dominated by out-of-plane components that do not efficiently couple with the in-plane excitonic dipoles of the monolayer WS$_2$. In contrast, e-SLRs in dielectric nanoparticle arrays with relatively high quality factors (Q $\sim$ 120) facilitate the formation of collective Mie exciton-polaritons, and may allow the development of novel polaritonic devices which can tailor the optoelectronic properties of atomically thin two-dimensional semiconductors.