论文标题
在WS2/WSE2Moiré晶格的分数填充物处相关的绝缘状态
Correlated Insulating States at Fractional Fillings of the WS2/WSe2 Moiré Lattice
论文作者
论文摘要
范德华材料的Moiré超晶格（例如扭曲的石墨烯和过渡金属二分法生成元）最近出现了一个引人入胜的平台，这要归功于MoiréMinibands中强烈的电子相互作用，以研究二维的强烈相关状态。在大多数系统中，当Moiré晶格被每个Moiré单位电池的电子数量填充时，相关状态出现。最近，在WS2/WSE2 Heterobilayer中报道了每个Moiré晶胞1/3和2/3孔处的相关状态，这暗示了电子相互作用的远距离性质。在这项工作中，采用对局部电气敏感的扫描微波阻抗显微镜技术，我们观察到一系列相关的绝缘状态在moiré小型材料的分数填充物上，在电子和孔掺杂的侧面和孔孔孔的角度均以与角度与角度相关的ws2/wse2 hetero-promientions在某些状态上启动了某些状态，并在某些状态上启动这些状态，并在某些状态上启动这些状态，这些状态在某些状态下均稳定到这些稳定性，这些稳定性在这些状态下均稳定到这些稳定性，这些稳定性在这些状态下均稳定到这些状态。绝缘状态对应于莫伊尔晶格中电子的排序，其周期性比莫伊尔单位单元大得多，这表明超出了最近邻居以外的远距离相互作用令人惊讶。我们的发现在二维的强烈相关状态的研究中迎来了前所未有的机会。
Moiré superlattices of van der Waals materials, such as twisted graphene and transitional metal dichalcogenides, have recently emerged as a fascinating platform to study strongly correlated states in two dimensions, thanks to the strong electron interaction in the moiré minibands. In most systems, the correlated states appear when the moiré lattice is filled by integer number of electrons per moiré unit cell. Recently, correlated states at fractional fillings of 1/3 and 2/3 holes per moiré unit cell has been reported in the WS2/WSe2 heterobilayer, hinting the long range nature of the electron interaction. In this work, employing a scanning microwave impedance microscopy technique that is sensitive to local electrical properties, we observe a series of correlated insulating states at fractional fillings of the moiré minibands on both electron- and hole-doped sides in angle-aligned WS2/WSe2 hetero-bilayers, with certain states persisting at temperatures up to 120 K. Monte Carlo simulations reveal that these insulating states correspond to ordering of electrons in the moiré lattice with a periodicity much larger than the moiré unit cell, indicating a surprisingly strong and long-range interaction beyond the nearest neighbors. Our findings usher in unprecedented opportunities in the study of strongly correlated states in two dimensions.
