论文标题
Ingan/gan纳米线中间带太阳能电池中的两光子光电流
Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells
论文作者
论文摘要
中间带太阳能电池具有使用单个半导体连接的超高功率转换效率的希望。许多当前的实施方式将材料与带镜的材料太小，无法实现最大效率或使用成本良好的底物。在这里，我们使用INGAN/GAN量子点 - 纳米线异质结构直接在硅上生长，以提供较低的成本，大型带中间的中间带太阳能电池平台。我们通过纳米线中的垂直堆叠的量子点展示了带有Sub-Bandgap光子（中间带太阳能电池操作的标志）的顺序两光子的生成。近红外光偏置为850 nm激光强度高达200 W/cm2的光电流在78 K时将光电流上方和下方提高到最高19％，在室温下44％。纳米结构的III二氮化物策略为逼真的室温中间带太阳能电池提供了一条途径，同时利用硅底物的成本优势。
Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.
