论文标题
均匀和清洁的二维过渡金属二分法生长的溶解至沉淀生长
Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides
论文作者
论文摘要
二维（2D）过渡金属二核苷（TMDC）引起了很多兴趣，并在许多应用中都表现出了希望。但是，由于难以控制反应物在当前化学蒸气沉积（CVD）生长过程中提供反应物的方式，因此获得具有干净表面的均匀TMDC是一项挑战。在这里，我们报告了一种称为溶解至沉淀（DP）生长的新生长方法，其中将金属源密封在玻璃基板内部以控制其对反应的喂养。值得注意的是，金属源内部玻璃内部向其表面的扩散提供了玻璃表面上的均匀金属源，并将TMDC的生长限制为仅表面反应，同时消除了不需要的气相反应。此功能会引起高度均匀的单层TMDC，其表面在厘米尺度的底物上具有干净的表面。 DP增长适用于各种TMDC及其合金，为通过金属源的良好控制提供了可控制的清洁TMDC生长的坚实基础。
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.
