论文标题
INGAAS/INP单光子检测器，在1550 nm处检测效率为60％
InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm
论文作者
论文摘要
INGAAS/INP单光子检测器（SPD）在实际应用中广泛用于近红外光子计数。光子检测效率（PDE）是SPD表征的最重要参数之一，因此，PDE的增加在工业发展和学术研究中始终起着核心作用。在这里，我们介绍了在1550 nm时PDE高达60％的高频门控INGAAS/INP SPD的实施。一方面，我们优化了INGAAS/INP单光雪崩二极管的结构设计和设备制造，并具有额外的介电 - 金属反射层，以相对将入射光子的吸收效率提高约20％。另一方面，我们开发了一个弱雪崩提取的单片读数电路，以最大程度地减少寄生能力，以抑制螺栓后效应。具有1.25 GHz正弦波门控和优化的门幅度和操作温度，SPD的特征是达到60％的PDE，深度计数速率（DCR）为340 kcps。为了实际使用，给定3 kCPS DCR作为参考，PDE的pde概率为5.5％，PDE达到约40％PDE，这可以显着提高基于近红外SPD的应用程序的性能。
InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore increasing PDE consistently plays a central role in both industrial development and academic research. Here we present the implementation of high-frequency gating InGaAs/InP SPD with a PDE as high as 60% at 1550 nm. On one hand, we optimize the structure design and device fabrication of InGaAs/InP single-photon avalanche diode with an additional dielectric-metal reflection layer to relatively increase the absorption efficiency of incident photons by ~ 20%. On the other hand, we develop a monolithic readout circuit of weak avalanche extraction to minimize the parasitic capacitance for the suppression of the afterpulsing effect. With 1.25 GHz sine wave gating and optimized gate amplitude and operation temperature, the SPD is characterized to reach a PDE of 60% with a dark count rate (DCR) of 340 kcps. For practical use, given 3 kcps DCR as a reference the PDE reaches ~ 40% PDE with an afterpulse probability of 5.5%, which can significantly improve the performance for the near-infrared SPD based applications.
