论文标题
渗透密度和电荷噪声低的渗透孔中的漏洞
Low percolation density and charge noise with holes in germanium
论文作者
论文摘要
我们通过将紧张的GE通道55〜nm放置在半导体/介电界面下方，以使平面GE/SIGE异质结构用于低混乱和安静的孔量子点操作。在异质结构效应晶体管中，我们测量了二维孔传输的渗透密度为$ 2.1 \ times10^{10}〜\ text {cm}^{ - 2} $，这表明埋在埋入的GE通道中经历的非常低的疾病潜在景观。这些GE异质结构支持孔量子点的安静操作，我们测量的电荷噪声水平低于检测极限$ \ sqrt {s_ \ text {e}} = 0.2〜μ \ text {ev}/\ sqrt {\ sqrt {\ sqrt {\ text {hz}}} $在1 Hz时。这些结果将平面GE作为缩放二维自旋量子阵列的有前途的平台。
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of $2.1\times10^{10}~\text{cm}^{-2}$, indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet operation of hole quantum dots and we measure charge noise levels that are below the detection limit $\sqrt{S_\text{E}}=0.2~μ\text{eV}/\sqrt{\text{Hz}}$ at 1 Hz. These results establish planar Ge as a promising platform for scaled two-dimensional spin qubit arrays.
