论文标题
由于微磁体诱导的杂散场，纳米线设备中的滞后磁倍率
Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets
论文作者
论文摘要
我们研究了由于COFE微磁体的流浪磁场，在INSB纳米线中研究了滞后磁力。没有任何铁磁组件的设备表明，INSB纳米线的磁静脉通常在零磁场时表现出局部最大值或局部最小值。然后，微带磁化的切换会导致正面或负的滞后依赖性作为电导最大值或最小值相对于整体外部场的转移。发现流浪场在数十毫米的范围内，与纳米线磁性发展的尺度相当。我们观察到，流浪场信号与具有铁磁接触（自旋阀）的设备中获得的信号相似。我们执行与实验合理一致的微磁模拟。局部变化的磁场的使用可能会为Majorana电路带来新的想法，其中纳米线网络需要控制纳米级的场取向。
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.
