论文标题

在节点线半径MOO2中,大磁磁性和非零浆果相

Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2

论文作者

Chen, Qin, Lou, Zhefeng, Zhang, ShengNan, Xu, Binjie, Zhou, Yuxing, Chen, Huancheng, Chen, Shuijin, Du, Jianhua, Wang, Hangdong, Yang, Jinhu, Wu, QuanSheng, Yazyev, Oleg V., Fang, Minghu

论文摘要

我们对电子带结构和费米表面进行了计算,并测量了磁化磁化强度(T,H)的纵向电阻率rhoxx(T,H),霍尔电阻率rhoxy(t,h)和量子振荡,磁化值是MOO2的各种磁场在MOO2的磁场上的函数。频带结构的计算表明,当忽略自旋轨道耦合时,MOO2是淋巴结线的半学。发现在2 K和9 t时达到5.03x10^4%的巨大磁路,其几乎二次的场依赖性和晶体引起的rhoxx(T)的上转向行为,这是许多拓扑非平凡的特征,以及在MOOO2中也出现了。观察到的特性归因于完美的电荷载体补偿,这两种计算依赖于费米表面拓扑和HALL电阻率测量。沿电流方向的磁场的负磁场的观察和de haas-van alphen测量中的非零浆果相都表明,MOO2中的一对Weyl点会出现在MOO2中,这可能是由于晶体对称性的破坏所致。这些结果强调了MOO2是研究氧化物拓扑特性的新平台材料。

We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity rhoxx(T,H), Hall resistivity rhoxy(T,H) and quantum oscillations of the magnetization as a function of temperature at various magnetic fields for MoO2 with monoclinic crystal structure. The band structure calculations show that MoO2 is a nodal-line semimetal when spin-orbit coupling is ignored. It was found that a large magnetoresistance reaching 5.03x10^4% at 2 K and 9 T, its nearly quadratic field dependence and a field-induced up-turn behavior of rhoxx(T), the characteristics common for many topologically non-trivial as well as trivial semimetals, emerge also in MoO2. The observed properties are attributed to a perfect charge-carrier compensation, evidenced by both calculations relying on the Fermi surface topology and the Hall resistivity measurements. Both the observation of negative magnetoresistance for magnetic field along the current direction and the non-zero Berry phase in de Haas-van Alphen measurements indicate that pairs of Weyl points appear in MoO2, which may be due to the crystal symmetry breaking. These results highlight MoO2 as a new platform materials for studying the topological properties of oxides.

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