论文标题
在二维电子气体中确定双线性磁磁反应的RASHBA参数
Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas
论文作者
论文摘要
与常规的重金属相比，由于其非常规物理学，可调能力和旋转电荷互转换的潜力，在过去十年中，已经对二维（2D）Rashba系统进行了深入研究。随着新一代基于自旋的逻辑和内存设备的出现，对具有更强大和更大转化效率的Rashba系统的搜索正在扩大。通常，需要进行苛刻的技术，例如角度和自旋分辨光发射光谱，以确定表征这些系统的Rashba参数$α_{R} $。在这里，我们引入了一种简单的方法，该方法允许通过分析角度依赖性磁转运实验的双线性响应来定量提取$α_{r} $。该方法基于在旋转的平面内磁场下调制Rashba-Split带的调制。我们表明，对于laalo $ _ {3} $/srtio $ _ {3} $接口的2D电子气体中的多种费米能量，我们的方法能够正确地产生$α_{r} $的$α_{r} $。通过应用栅极电压，我们在频带结构的区域中观察到最大$α_{r} $，其中带互比效应最大化了RashBA效应，并始终与理论预测一致。
Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.
