论文标题
PDCOO $ _2 $纳米结构的相相干长度的确定
Determination of the phase coherence length of PdCoO$_2$ nanostructures
论文作者
论文摘要
二维分层化合物PDCOO $ _2 $是最好的氧化物导体之一，它提供了一个有趣的研究领域，该研究领域由较长的平均自由路径和〜51000 cm2/vs的高移动性开放。这些属性将PDCOO $ _2 $变成纳米级量子设备的候选材料。通过探索源自纳米级PDCOO $ _2 $ HALL-BAR设备的通用电导波动，我们确定了面向C轴的pDCOO $ _2 $薄膜中电子传输的相相干长度，达到〜100 nm。测得的相位相干长度的温度依赖性弱表明，在PDCOO $ _2 $薄膜中，在双边界处的缺陷散射控制相位破裂。这些结果表明，通过精制的微加工和双边界的抑制，可以通过实现小于双域大小的设备来实现相相一致的设备。
The two-dimensional layered compound PdCoO$_2$ is one of the best oxide conductors, providing an intriguing research arena opened by the long mean free path and the very high mobility of ~51000 cm2/Vs. These properties turn PdCoO$_2$ into a candidate material for nanoscale quantum devices. By exploring universal conductance fluctuations originating at nanoscale PdCoO$_2$ Hall-bar devices, we determined the phase coherence length of electron transport in c-axis oriented PdCoO$_2$ thin films to equal ~100 nm. The weak temperature dependence of the measured phase coherence length suggests that defect scattering at twin boundaries in the PdCoO$_2$ thin film governs phase breaking. These results suggest that phase coherent devices can be achieved by realizing the devices smaller than the size of twin domains, via refined microfabrication and suppression of twin boundaries.
