论文标题

从弱抗钙化到磁复杂氧化物界面的围绕散射

From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface

论文作者

Cai, Xinxin, Yue, Jin, Xu, Peng, Jalan, Bharat, Pribiag, Vlad S.

论文摘要

对电阻的量子校正可以作为材料磁性景观的敏感探针。例如,时间转移的电子路径之间的干扰会引起弱定位效应,这可以提供有关旋转和轨道运动之间耦合的信息,而近托效应对旋转杂质的存在敏感。在这里,我们使用低温磁转运测量值揭示了从弱抗封闭化(WAL)到srtio $ _3 $与mott ndtio ndtio ndtio $ _3 $之间的界面形成的准二维电子气体中的近距散射的过渡。由于NDTIO $ _3 $ layer的厚度增加,这种过渡发生。对近多散射和WAL的分析表明,存在与扩展的磁性区域的原子级磁杂质的存在,这些磁性区域通过强磁交换相互作用影响运输。这导致了不同的磁性行为,可以用作二维中磁性特性的敏感探针。

Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide information about the coupling between spins and orbital motion, while the Kondo effect is sensitive to the presence of spin impurities. Here we use low-temperature magnetotransport measurements to reveal a transition from weak antilocalization (WAL) to Kondo scattering in the quasi-two-dimensional electron gas formed at the interface between SrTiO$_3$ and the Mott insulator NdTiO$_3$. This transition occurs as the thickness of the NdTiO$_3$ layer is increased. Analysis of the Kondo scattering and WAL points to the presence of atomic-scale magnetic impurities coexisting with extended magnetic regions that affect transport via a strong magnetic exchange interaction. This leads to distinct magnetoresistance behaviors that can serve as a sensitive probe of magnetic properties in two dimensions.

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