论文标题
通过广义边界条件定量金属/绝缘体杂种结构中的界面自旋荷利转换
Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions
论文作者
论文摘要
我们在实验上介绍并验证了一个通用理论框架，用于描述具有界面自旋轨耦合（ISOC）的非磁性金属/绝缘体结构中的自旋荷利互连。我们的公式基于补充有广义边界条件的漂移扩散方程。后者编码ISOC的效果，并将此类系统中的电子传输与界面处的旋转损耗和旋转电荷互连相关联，该界面分别通过$ g _ {\ parallel/\ perp} $和$σ__{\ rm {sc/cs/cs/cs} $进行了参数化。我们证明了转换效率仅取决于这些界面参数。我们将形式主义应用于利用ISOC的两个典型的自旋设备：侧向自旋阀和一个多层霍尔棒，为此我们分别计算非本地电阻和自旋霍尔磁场抗性。最后，我们在这两个设备上使用BIO $ _X $/CU接口进行测量，并验证与ISOC相关的传输属性是否通过相同的一组界面参数量化。
We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface, which are parameterized, respectively, by $G_{\parallel/\perp}$ and $σ_{\rm{sc/cs}}$. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiO$_x$/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.
