论文标题
与交错的自旋轨道诱导的无野外确定性磁化切换
Field-free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques
论文作者
论文摘要
基于自旋轨道扭矩（SOT）的磁随机访问记忆（MRAM）被认为是由于其超高速度和低功率消耗而成为新兴的非挥发记忆。 SOT设备中的无现场切换模式对学术界和行业都引起了极大的兴趣。在这里，我们通过使用两种电流顺序通过的交织路径，在常规磁道连接（MTJ）中提出了一种新颖的无现场确定性磁化切换，对制造过程或其他物理效应的要求较少。开关是双极的，因为最终磁化状态取决于电流路径的组合。通过Macrospin和微磁模拟验证了所提出的模式的功能和鲁棒性。进一步研究了野外扭矩和dzyaloshinskii-moriya相互作用（DMI）效应的影响。我们提出的架构显示出良好的可扩展性，并有望实现新颖的数字逻辑甚至内存平台的计算。
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest to both academia and industry. Here we propose a novel field-free deterministic magnetization switching in a regular magnetic tunnel junction (MTJ) by using two currents sequentially passing interlaced paths, with less requirements of manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed schema is validated through both macrospin and micromagnetic simulation. The influences of field-like torque and Dzyaloshinskii-Moriya interaction (DMI) effect are further researched. Our proposed schema shows good scalability and is expected to realize novel digital logic and even computing-in-memory platform.
