论文标题
银河系中的硅X射线吸收：气态成分
Silicon X-ray absorption in the Galactic ISM: the gaseous component
论文作者
论文摘要
我们使用低质量X射线二进制物的高分辨率Chandra光谱对Si K边缘的气态成分进行了详细分析。我们使用ISMABS模型的Amotified版本拟合光谱，包括针对所有Si Ionic物种的新光吸吸收横切式Computived。我们估计了Si I，Si II，Si III，Si XII和Si XIII的柱密度，它们追踪了银河系星际培养基的温暖，中间温度和热阶段。我们发现前两个阶段的离子分数相似。这可能是由于血浆的物理状态由温度确定或在源附近的吸收材料的存在确定。我们的发现强调了在尝试解决固体组件之前，需要对气体组件进行准确建模。
We present a detailed analysis of the gaseous component of the Si K edge using high-resolution Chandra spectra of low-mass X-ray binaries. We fit the spectra with amodified version of the ISMabs model, including new photoabsorption cross sectionscomputed for all Si ionic species. We estimate column densities for Si i, Si ii, Si iii, Si xii and Si xiii, which trace the warm, intermediate temperature and hot phases of the Galactic interstellar medium. We find that the ionic fractions of the first two phases are similar. This may be due to the physical state of the plasma determined by the temperature or to the presence of absorber material in the close vicinity of the sources. Our findings highlight the need for accurate modeling of the gaseous component before attempting to address the solid component.
